Central Semiconductor - 2N5087TRA

  1. Home
  2. Central Semiconductor - 2N5087TRA
2N5087TRA by Central Semiconductor

Image shown is a representation only.

Manufacturer Central Semiconductor
Manufacturer's Part Number 2N5087TRA
Description PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Package Style (Meter): CYLINDRICAL; No. of Terminals: 3;
Datasheet 2N5087TRA Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 40 MHz
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
JEDEC-95 Code: TO-92
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 250
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Additional Features: LOW NOISE
Maximum Collector-Base Capacitance: 4 pF
Maximum VCEsat: .3 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC817DS,115 by Nexperia

BC817DS,115

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;
BC817-25,215 by NXP Semiconductors

BC817-25,215

NXP Semiconductors

NXP Semiconductors' BC817-25,215 is a NPN BJT transistor for switching applications. With VCEsat of 0.7V and hFE of 160, it operates at max 150°C with IC of 0.5A. Its small outline package makes it suitable for surface mount designs.
MMBT2222ALT1G by Rochester Electronics

MMBT2222ALT1G

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
BC817-25 by Fairchild Semiconductor

BC817-25

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;
2N2219A by Dionics-usa

2N2219A

Dionics-usa

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC847C by NXP Semiconductors

BC847C

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
BC846B by Diodes Incorporated

BC846B

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N2219A by Semiconductor Technology

2N2219A

Semiconductor Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N2222A by Nte Electronics

2N2222A

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;
2N2907A by Siemens

2N2907A

Siemens

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
2N2907A by Texas Instruments

2N2907A

Texas Instruments

2N2907A by Texas Instruments is a PNP BJT transistor with max. power dissipation of 0.4W, hFE of 100, and max. collector-emitter voltage of 60V. Ideal for switching applications due to its fast turn-on time (45ns) and high transition frequency (200MHz).
JANTX2N2222AUA by Vpt Components

JANTX2N2222AUA

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .8 A; Package Body Material: PLASTIC/EPOXY;
MMBT3906,215 by Nexperia

MMBT3906,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;
MMBT3904 by Nte Electronics

MMBT3904

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;
ZTX651 by Diodes Incorporated

ZTX651

Diodes Incorporated

ZTX651 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 1W, hFE of 100, and max collector-emitter voltage of 60V. Ideal for applications requiring high frequency operation, such as RF amplifiers or oscillators due to its nominal transition frequency of 175MHz.
2N2222A by Semiconductor Technology

2N2222A

Semiconductor Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC857BS,115 by NXP Semiconductors

BC857BS,115

NXP Semiconductors

BC857BS,115 by NXP Semiconductors is a PNP BJT transistor with 2 elements for switching applications. It has a hFE of 200, VCEO of 45V, and IC of 0.1A. This surface-mount transistor operates up to 150°C and has a transition frequency of 100MHz.
BC847C-13-F by Diodes Incorporated

BC847C-13-F

Diodes Incorporated

Diodes Inc. BC847C-13-F is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 420, and fT of 300MHz. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and max. collector-emitter voltage of 45V.
MMBT3904 by Micro Commercial Components

MMBT3904

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;
BC807-40W,115 by NXP Semiconductors

BC807-40W,115

NXP Semiconductors

BC807-40W,115 by NXP Semiconductors is a PNP BJT transistor for switching applications. With a VCEsat of 0.7V and hFE of 250, it can handle up to 0.5A collector current. Operating at a max temperature of 150°C, this transistor has a transition frequency of 80MHz making it suitable for high-speed switching circuits.