BSS123T-HF by Comchip Technology | Transistors

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Manufacturer	Comchip Technology
Manufacturer's Part Number	BSS123T-HF
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G3;
Datasheet	BSS123T-HF Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	4.6 pF
Maximum Drain Current (ID):	.19 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	3
Minimum DS Breakdown Voltage:	100 V
Maximum Power Dissipation (Abs):	.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	7 ohm

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