Panjit International - 2N7002KW_R1_00001

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2N7002KW_R1_00001 by Panjit International

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Manufacturer Panjit International
Manufacturer's Part Number 2N7002KW_R1_00001
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .115 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
Datasheet 2N7002KW_R1_00001 Datasheet
NAME DESCRIPTION
Other Names: 3757-2N7002KW_R1_00001DKR
3757-2N7002KW_R1_00001TR
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 5 pF
Maximum Drain Current (ID): .115 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 60 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: ULTRA LOW RESISTANCE
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: 3 ohm
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