Comchip Technology - MJD117-HF

  1. Home
  2. Comchip Technology - MJD117-HF
MJD117-HF by Comchip Technology

Image shown is a representation only.

Manufacturer Comchip Technology
Manufacturer's Part Number MJD117-HF
Description Power Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet MJD117-HF Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIP142 by Continental Device India

TIP142

Continental Device India

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Transistor Application: AMPLIFIER;
TIP127FP by New Jersey Semiconductor Products

TIP127FP

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000; Transistor Element Material: SILICON; No. of Elements: 1;
TIP41C by Power Innovations

TIP41C

Power Innovations

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Transistor Element Material: SILICON; JESD-30 Code: R-PSFM-T3;
TIP32CG by Onsemi

TIP32CG

Onsemi

TIP32CG by Onsemi is a PNP power BJT with 3A max collector current, 40W power dissipation, and 100V max collector-emitter voltage. Ideal for switching applications, it has a min hFE of 10 and operates up to 150°C. The transistor comes in a rectangular package with through-hole terminals.
TIP125 by Semiconductors

TIP125

Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
ULN2803A by Onsemi

ULN2803A

Onsemi

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
MJD44H11J by Nexperia

MJD44H11J

Nexperia

MJD44H11J by Nexperia is a NPN BJT transistor for switching applications. It has a max VCEsat of 1V, max collector-emitter voltage of 80V, and max collector current of 8A. With a small outline package style, it operates b/w -55 to 150°C and offers a transition frequency of 160MHz.
TIP122 by SPC TECHNOLOGY/ MULTICOMP

TIP122

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3;
ULN2803A by Sanken Electric

ULN2803A

Sanken Electric

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDIP-T18; Package Body Material: PLASTIC/EPOXY;
TIP35C by Inchange Semiconductor

TIP35C

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
MJD122T4 by STMicroelectronics

MJD122T4

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A; Maximum Time At Peak Reflow Temperature (s): 30;
TIP125 by Toshiba

TIP125

Toshiba

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Body Material: PLASTIC/EPOXY;
2N3055 by Microsemi

2N3055

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 117 W; Maximum Collector Current (IC): 15 A;
JANTXV2N3055 by New England Semiconductor

JANTXV2N3055

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Terminal Form: PIN/PEG; Qualification: Not Qualified;
BUV48A by SPC TECHNOLOGY/ MULTICOMP

BUV48A

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
JANTX2N3055 by Powertech

JANTX2N3055

Powertech

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Package Shape: ROUND; Qualification: Not Qualified;
TIP117 by Fairchild Semiconductor

TIP117

Fairchild Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Qualification: Not Qualified;
BD140 by Continental Device India

BD140

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP41CTU by Onsemi

TIP41CTU

Onsemi

TIP41CTU by Onsemi is a NPN power BJT with 100V VCEO, 6A IC, and 65W Ptot. Ideal for switching applications, it has hFE of 15 and fT of 3MHz. The transistor comes in a plastic/epoxy package with through-hole terminals for easy mounting.
BDW93C by Fairchild Semiconductor

BDW93C

Fairchild Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; Package Style (Meter): FLANGE MOUNT;