Computer Memory Solutions - CM5126412800SOX20220

CM5126412800SOX20220 by Computer Memory Solutions

Image shown is a representation only.

Manufacturer	Computer Memory Solutions
Manufacturer's Part Number	CM5126412800SOX20220
Description	CMS; Product Type: RAM Module; Memory Size: 8 GB; Memory Technology: DDR3 SDRAM; Device Supported: Desktop PC; Number of Modules: 2 x 4GB;

CM5126412800SOX20220 Technical Details

NAME	DESCRIPTION
Product Name:	8GB (2X4GB) RAM Memory 4 Apple iMac "Core i7" 3.1 21.5-Inch (Late 2012
Device Supported:	Desktop PC
Packaged Quantity:	2
Brand Name:	CMS
Form Factor:	SoDIMM
Memory Technology:	DDR3 SDRAM
Number of Modules:	2 x 4GB
Memory Size:	8 GB
Product Type:	RAM Module
Number of Pins:	204-pin
Memory Speed:	1600 MHz
Compatibility:	Apple iMac "Core i7" 3.1 21.5-Inch (Late 2012)
Memory Standard:	DDR3-1600/PC3-12800

Popular Products

2N2222A

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; No. of Elements: 1;

LFXTAL025159REEL

Iqd Frequency Products

LFXTAL025159REEL by IQD Frequency Products is a 32.768 kHz crystal oscillator with 20 ppm frequency tolerance and 40,000 ohm series resistance. It is ideal for applications requiring precise timekeeping, such as real-time clocks in IoT devices or microcontrollers in wearables. The surface-mount design with a drive level of 1 uW makes it suitable for compact electronic systems.

2N7002,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

SMBJ18CA

Telefunken Microelectronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2N2222A

Forward International Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

2N7002

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SN6505BDBVR

Texas Instruments

SN6505BDBVR by Texas Instruments is a small outline, low profile interface IC with 6 terminals. It operates b/w -55 to 125°C and supports a max output current of 1.5A at supply voltages ranging from 2.25V to 5.5V. Ideal for military-grade applications requiring compact design and high reliability.

LM107H/883C

Rochester Electronics

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Package Equivalence Code: CAN8,.2;

BSS123LT1G

Onsemi

BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.

1N4148

New Jersey Semiconductor Products

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;