28301 by Ddk | Connectors

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Manufacturer	Ddk
Manufacturer's Part Number	28301
Description	RF SMC CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1500VAC; Shell Finish: NICKEL; Body Depth: .425 inch;
Datasheet	28301 Datasheet
In Stock	3

NAME	DESCRIPTION
Voltage Standing Wave Ratio:	1.2
Mating Info.:	MULTIPLE MATING PARTS AVAILABLE
IEC Conformity:	NO
Panel Mount:	YES
Shell Finish:	NICKEL
MIL Conformity:	YES
Termination Type:	SOLDER
Contact Gender:	FEMALE
Connector Type:	RF SMC CONNECTOR
Contact Resistance:	6 mohm
Insulation Resistance:	1000000000 ohm
Mounting Style:	STRAIGHT
No. of Ports:	1
Contact Style:	COAX
Filter Feature:	NO
Mounting Type:	PANEL
Body Depth:	.425 inch
Total No. of Contacts:	1
Dielectric Withstanding Voltage (V):	1500VAC
Coupling Type:	THREADED
Terminal Length:	.02 inch
Rated Current - Signal:	1 A
Characteristic Impedance:	50 ohm
Insulator Material:	POLYTETRAFLUOROETHYLENE
Option:	GENERAL PURPOSE
Maximum Operating Frequency:	1 GHz
Shell Material:	BRASS
Body or Shell Style:	RECEPTACLE
DIN Conformance:	NO

Pricing (USD)

Qty.	Unit Price	Ext. Price
3	-	-

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.

ULN2003ADR by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications in small outline packages with Gull Wing terminals.

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.

2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.