Defense Logistics Agency - JAN2N6764

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JAN2N6764 by Defense Logistics Agency

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Manufacturer Defense Logistics Agency
Manufacturer's Part Number JAN2N6764
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet JAN2N6764 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 150 mJ
Package Body Material: METAL
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 38 A
JEDEC-95 Code: TO-204AE
Maximum Pulsed Drain Current (IDM): 152 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 2
Minimum DS Breakdown Voltage: 100 V
Qualification: Qualified
Terminal Position: BOTTOM
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-MBFM-P2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Reference Standard: MIL-19500/543G
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .055 ohm
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