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| Manufacturer | Diodes Incorporated |
|---|---|
| Manufacturer's Part Number | APT13003EZTR-G1 |
| Description | NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 1.1 W; Maximum Collector Current (IC): 1.5 A; |
| Datasheet | APT13003EZTR-G1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 4 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 1.5 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 1.1 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| JESD-30 Code: | O-PBCY-W3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | WIRE |
| Maximum Operating Temperature: | 150 Cel |
| JEDEC-95 Code: | TO-92 |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 5 |
| JESD-609 Code: | e3 |
| Maximum Collector-Emitter Voltage: | 465 V |
| Peak Reflow Temperature (C): | 260 |
