Diodes Incorporated - DMC2025UFDB-13

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DMC2025UFDB-13 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMC2025UFDB-13
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.4 W; Package Style (Meter): SMALL OUTLINE; Terminal Finish: NICKEL PALLADIUM GOLD;
Datasheet DMC2025UFDB-13 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6 A
Maximum Pulsed Drain Current (IDM): 20 A
Surface Mount: NO
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 6
Maximum Power Dissipation (Abs): 1.4 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .035 ohm
Avalanche Energy Rating (EAS): 8.5 mJ
Maximum Feedback Capacitance (Crss): 77 pF
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
JESD-609 Code: e4
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 20 V
Reference Standard: MIL-STD-202
Peak Reflow Temperature (C): 260
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