Diodes Incorporated - DMC25D1UVT-13

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DMC25D1UVT-13 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMC25D1UVT-13
Description N-CHANNEL AND P-CHANNEL; Configuration: COMMON SUBSTRATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-PDSO-G6;
Datasheet DMC25D1UVT-13 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMMON SUBSTRATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.9 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): 1.3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .055 ohm
Other Names: DMC25D1UVT-13DI
Maximum Feedback Capacitance (Crss): 3.3 pF
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 12 V
Additional Features: HIGH RELIABILITY
Peak Reflow Temperature (C): 260
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