Diodes Incorporated - DMG2302UKQ-7

  1. Home
  2. Diodes Incorporated - DMG2302UKQ-7
DMG2302UKQ-7 by Diodes Incorporated

Image shown is a representation only.

Manufacturer Diodes Incorporated
Manufacturer's Part Number DMG2302UKQ-7
Description Small Signal Field-Effect Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30;
Datasheet DMG2302UKQ-7 Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Peak Reflow Temperature (C): 260
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N7002DWQ-7-F by Diodes Incorporated

2N7002DWQ-7-F

Diodes Incorporated

Diodes Incorporated 2N7002DWQ-7-F is a N-channel FET with 60V DS breakdown voltage and 0.23A max drain current. Ideal for switching applications, it features separate elements with built-in diode in a small outline package. Operating in enhancement mode, it has 7.5 ohm max drain-source resistance and peak reflow temp of 260°C.
ZVP1320FTA by Zetex Plc

ZVP1320FTA

Zetex Plc

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 200 V; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Position: DUAL;
2N7000 by Jiangsu Changjiang Electronics Technology

2N7000

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; JEDEC-95 Code: TO-92; Transistor Application: SWITCHING;
BS170 by General Semiconductor

BS170

General Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Terminal Form: WIRE; Package Style (Meter): CYLINDRICAL;
2N7002KT7G by Onsemi

2N7002KT7G

Onsemi

2N7002KT7G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.32A ID, and 1.6 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features include PLASTIC/EPOXY body, GULL WING terminals, and -55 to 150 °C temp range.
BSS123 by Micro Commercial Components

BSS123

Micro Commercial Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Minimum DS Breakdown Voltage: 100 V; Qualification: Not Qualified;
2N7002K by Secos

2N7002K

Secos

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 5 pF; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
2N7002LT3G by Fairchild Semiconductor

2N7002LT3G

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING; Operating Mode: ENHANCEMENT MODE;
BSS138W-7-F by Multicomp Pro

BSS138W-7-F

Multicomp Pro

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;
BS170 by Nte Electronics

BS170

Nte Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-30 Code: O-PBCY-T3; Package Body Material: PLASTIC/EPOXY;
LND150N3-G by Microchip Technology

LND150N3-G

Microchip Technology

LND150N3-G by Microchip is a N-CHANNEL FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it operates in DEPLETION MODE with 0.74W power dissipation and -55 to 150°C temperature range. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
SI2305CDS-T1-GE3 by Vishay Intertechnology

SI2305CDS-T1-GE3

Vishay Intertechnology

SI2305CDS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 8V DS breakdown voltage and 5.8A drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.7W. With a package style of small outline and dual terminal position, it offers efficient performance in various electronic circuits.
LBSS84LT1G by Leshan Radio

LBSS84LT1G

Leshan Radio

LBSS84LT1G by Leshan Radio is a P-CHANNEL small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.13A and a max power dissipation of 0.225W.
BSD235CH6327XTSA1 by Infineon Technologies

BSD235CH6327XTSA1

Infineon Technologies

Infineon's BSD235CH6327XTSA1 is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Operating in enhancement mode, it has max ID of 0.95A and RDS(on) of 0.35Ω. Ideal for automotive applications meeting AEC-Q101 standard.
FDN340P-F095 by Fairchild Semiconductor

FDN340P-F095

Fairchild Semiconductor

Fairchild Semiconductor's FDN340P-F095 is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2A, Power Dissipation of 0.5W, and operates in ENHANCEMENT MODE. The transistor has a GULL WING terminal form, RECTANGULAR package shape, and METAL-OXIDE SEMICONDUCTOR technology.
BSS123 by National Semiconductor

BSS123

National Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
BSS84 by NXP Semiconductors

BSS84

NXP Semiconductors

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Feedback Capacitance (Crss): 12 pF; Maximum Drain Current (ID): .13 A;
2N7000_D74Z by Fairchild Semiconductor

2N7000_D74Z

Fairchild Semiconductor

2N7000_D74Z by Fairchild Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage. It operates in ENHANCEMENT MODE for SWITCHING applications, with 0.2A Drain Current and 5 ohm On Resistance. Suitable for low-power circuits due to its 0.4W Power Dissipation and 150°C Operating Temperature range.
NDS331N_NL by Fairchild Semiconductor

NDS331N_NL

Fairchild Semiconductor

NDS331N_NL by Fairchild Semiconductor is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.3A Drain Current, 0.16 ohm On Resistance, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has a max power dissipation of 0.5W and can withstand temperatures up to 150°C.
IRLML6402TRPBF-1 by Infineon Technologies

IRLML6402TRPBF-1

Infineon Technologies

Infineon's IRLML6402TRPBF-1 is a P-CHANNEL FET with 4.3A max drain current and 1.3W power dissipation. Ideal for surface mount applications, it operates up to 150°C, making it suitable for various electronic devices requiring high-performance transistors.