Diodes Incorporated - DMG3415UFY4Q-7

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DMG3415UFY4Q-7 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMG3415UFY4Q-7
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 16 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 3;
Datasheet DMG3415UFY4Q-7 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .0025 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
JESD-609 Code: e4
No. of Terminals: 3
Minimum DS Breakdown Voltage: 16 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Additional Features: HIGH RELIABILITY
Reference Standard: AEC-Q101
Case Connection: DRAIN
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .039 ohm
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