Diodes Incorporated - DMHT6016LFJ-13

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DMHT6016LFJ-13 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMHT6016LFJ-13
Description N-CHANNEL; Configuration: 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Maximum Drain Current (ID): 10.6 A; Package Style (Meter): SMALL OUTLINE;
Datasheet DMHT6016LFJ-13 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 10.6 A
Maximum Pulsed Drain Current (IDM): 14.8 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 12
Maximum Power Dissipation (Abs): 2.7 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N12
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .022 ohm
Avalanche Energy Rating (EAS): 11.7 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Maximum Drain Current (Abs) (ID): 10.6 A
Peak Reflow Temperature (C): 260
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