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| Manufacturer | Diodes Incorporated |
|---|---|
| Manufacturer's Part Number | DMN1006UCA6-7 |
| Description | N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Terminal Position: BOTTOM; Package Shape: RECTANGULAR; JESD-609 Code: e4; |
| Datasheet | DMN1006UCA6-7 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
DMN1006UCA6-7-ND DMN1006UCA6-7DICT DMN1006UCA6-7DIDKR DMN1006UCA6-7DITR |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | NICKEL PALLADIUM GOLD |
| JESD-609 Code: | e4 |
| No. of Terminals: | 6 |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY |
| JESD-30 Code: | R-PBGA-B6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Operating Mode: | ENHANCEMENT MODE |
| Peak Reflow Temperature (C): | 260 |
| Maximum Drain-Source On Resistance: | .011 ohm |
| Moisture Sensitivity Level (MSL): | 1 |









