Diodes Incorporated - DMN1025UFDB-13

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DMN1025UFDB-13 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMN1025UFDB-13
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 4.8 mJ; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): 6.9 A;
Datasheet DMN1025UFDB-13 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6.9 A
Maximum Pulsed Drain Current (IDM): 35 A
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .025 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 4.8 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 12 V
Additional Features: HIGH RELIABILITY
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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