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Manufacturer | Diodes Incorporated |
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Manufacturer's Part Number | DMN1053UCP4-7 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Maximum Drain-Source On Resistance: .053 ohm; |
Datasheet | DMN1053UCP4-7 Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Feedback Capacitance (Crss): | 126 pF |
Maximum Drain Current (ID): | 4 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
JESD-609 Code: | e3 |
No. of Terminals: | 4 |
Minimum DS Breakdown Voltage: | 12 V |
Terminal Position: | BOTTOM |
Package Style (Meter): | GRID ARRAY |
JESD-30 Code: | S-PBGA-B4 |
No. of Elements: | 1 |
Package Shape: | SQUARE |
Terminal Form: | BALL |
Operating Mode: | ENHANCEMENT MODE |
Peak Reflow Temperature (C): | 260 |
Maximum Drain-Source On Resistance: | .053 ohm |