Diodes Incorporated - DMN1260UFA-7B

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DMN1260UFA-7B by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMN1260UFA-7B
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-N2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
Datasheet DMN1260UFA-7B Datasheet
NAME DESCRIPTION
Other Names: DMN1260UFA-7BDIDKR
DMN1260UFA-7BDITR
DMN1260UFA-7BDICT
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .5 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
JESD-609 Code: e4
No. of Terminals: 2
Minimum DS Breakdown Voltage: 12 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-N2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .366 ohm
Moisture Sensitivity Level (MSL): 1
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