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| Manufacturer | Diodes Incorporated |
|---|---|
| Manufacturer's Part Number | DMN12M3UCA6-7 |
| Description | N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.47 W; Maximum Turn On Time (ton): 4787 ns; Maximum Time At Peak Reflow Temperature (s): 30; |
| Datasheet | DMN12M3UCA6-7 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Feedback Capacitance (Crss): | 297 pF |
| Maximum Turn On Time (ton): | 4787 ns |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Minimum Operating Temperature: | -55 Cel |
| No. of Terminals: | 6 |
| Maximum Power Dissipation (Abs): | 2.47 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| Maximum Turn Off Time (toff): | 10255 ns |
| JESD-30 Code: | R-XBCC-N6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |
