Diodes Incorporated - DMN2009UCA4-7

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DMN2009UCA4-7 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMN2009UCA4-7
Description N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Minimum DS Breakdown Voltage: 20 V; No. of Terminals: 4;
Datasheet DMN2009UCA4-7 Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 107 pF
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: NICKEL GOLD
JESD-609 Code: e4
Minimum Operating Temperature: -55 Cel
No. of Terminals: 4
Minimum DS Breakdown Voltage: 20 V
Maximum Power Dissipation (Abs): 1.9 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: S-XBCC-N4
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Reference Standard: MIL-STD-202
Maximum Drain-Source On Resistance: .0226 ohm
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