DMN2080UCB4-7 by Diodes Incorporated | Transistors

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Manufacturer	Diodes Incorporated
Manufacturer's Part Number	DMN2080UCB4-7
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Terminal Position: BOTTOM; Maximum Drain Current (ID): 4 A;
Datasheet	DMN2080UCB4-7 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	4 A
Surface Mount:	YES
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	4
Maximum Power Dissipation (Abs):	1.25 W
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY
JESD-30 Code:	S-PBGA-B4
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	BALL
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.056 ohm
Maximum Feedback Capacitance (Crss):	33 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e1
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	20 V
Peak Reflow Temperature (C):	260

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