Diodes Incorporated - DMN2990UFA-7B

DMN2990UFA-7B by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMN2990UFA-7B
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Additional Features: HIGH RELIABILITY; Operating Mode: ENHANCEMENT MODE;
Datasheet DMN2990UFA-7B Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .38 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 3
Maximum Power Dissipation (Abs): .4 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .99 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 5.6 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 20 V
Additional Features: HIGH RELIABILITY
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): .51 A
Peak Reflow Temperature (C): 260
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