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Manufacturer | Diodes Incorporated |
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Manufacturer's Part Number | DMN3003LCA8-7 |
Description | N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Reference Standard: MIL-STD-202; Package Style (Meter): CHIP CARRIER; |
Datasheet | DMN3003LCA8-7 Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Configuration: | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Feedback Capacitance (Crss): | 160 pF |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Minimum Operating Temperature: | -55 Cel |
No. of Terminals: | 8 |
Maximum Power Dissipation (Abs): | 2.5 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | CHIP CARRIER |
JESD-30 Code: | R-XBCC-N8 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Reference Standard: | MIL-STD-202 |
Maximum Drain-Source On Resistance: | .0051 ohm |