Diodes Incorporated - DMP2541UCB9-7

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DMP2541UCB9-7 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMP2541UCB9-7
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Power Dissipation Ambient: 1.78 W; Additional Features: GATE PROTECTED;
Datasheet DMP2541UCB9-7 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5.4 A
Surface Mount: YES
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 9
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
JESD-30 Code: S-PBGA-B9
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: BALL
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 1.78 W
Maximum Drain-Source On Resistance: .04 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 30 pF
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 25 V
Additional Features: GATE PROTECTED
Peak Reflow Temperature (C): 260
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