Diodes Incorporated - DMP65H11D0HSS-13

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DMP65H11D0HSS-13 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMP65H11D0HSS-13
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e3;
Datasheet DMP65H11D0HSS-13 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .27 A
Maximum Pulsed Drain Current (IDM): 2.3 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn)
No. of Terminals: 8
Maximum Power Dissipation (Abs): 1.9 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 11 ohm
Maximum Feedback Capacitance (Crss): 3.5 pF
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 650 V
Reference Standard: MIL-STD-202
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