Diodes Incorporated - DMPH3010LPSQ-13

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DMPH3010LPSQ-13 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMPH3010LPSQ-13
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Maximum Drain-Source On Resistance: .01 ohm; Terminal Finish: MATTE TIN;
Datasheet DMPH3010LPSQ-13 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 60 A
Maximum Pulsed Drain Current (IDM): 100 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2.6 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .01 ohm
Avalanche Energy Rating (EAS): 113 mJ
Maximum Feedback Capacitance (Crss): 647 pF
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Additional Features: HIGH RELIABILITY
Reference Standard: AEC-Q101; MIL-STD-202
Peak Reflow Temperature (C): 260
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