Diodes Incorporated - DMTH4004LK3Q-13

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DMTH4004LK3Q-13 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMTH4004LK3Q-13
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 200 A;
Datasheet DMTH4004LK3Q-13 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 100 A
Maximum Pulsed Drain Current (IDM): 200 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .005 ohm
Avalanche Energy Rating (EAS): 90 mJ
Other Names: DMTH4004LK3Q-13-ND
DMTH4004LK3Q-13DICT
DMTH4004LK3Q-13DITR
DMTH4004LK3Q-13DIDKR
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Additional Features: HIGH RELIABILITY
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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