DMTH4014LPDQ-13 by Diodes Incorporated | Transistors

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Manufacturer	Diodes Incorporated
Manufacturer's Part Number	DMTH4014LPDQ-13
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42.8 W; Minimum Operating Temperature: -55 Cel; No. of Terminals: 8;
Datasheet	DMTH4014LPDQ-13 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	43.6 A
Maximum Pulsed Drain Current (IDM):	174 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	42.8 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.015 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	20.5 mJ
Maximum Feedback Capacitance (Crss):	24 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	40 V
Reference Standard:	AEC-Q101; IATF 16949; MIL-STD-202
Peak Reflow Temperature (C):	260

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