Diodes Incorporated - DMTH6010LPDWQ-13

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DMTH6010LPDWQ-13 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMTH6010LPDWQ-13
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37.5 W; Transistor Application: SWITCHING; No. of Elements: 2;
Datasheet DMTH6010LPDWQ-13 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 47.6 A
Maximum Pulsed Drain Current (IDM): 90 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 37.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .016 ohm
Avalanche Energy Rating (EAS): 20 mJ
Maximum Feedback Capacitance (Crss): 58 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Reference Standard: AEC-Q101; IATF 16949; MIL-STD-202
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