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Manufacturer | Diodes Incorporated |
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Manufacturer's Part Number | DTM3A25P20NFDB-7 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Peak Reflow Temperature (C): 260; No. of Elements: 1; |
Datasheet | DTM3A25P20NFDB-7 Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | .63 A |
Surface Mount: | YES |
Terminal Finish: | NICKEL PALLADIUM GOLD |
No. of Terminals: | 6 |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | S-PDSO-N6 |
No. of Elements: | 1 |
Package Shape: | SQUARE |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Power Dissipation Ambient: | 2.47 W |
Maximum Drain-Source On Resistance: | .0004 ohm |
Maximum Feedback Capacitance (Crss): | 5.37 pF |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e4 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 20 V |
Peak Reflow Temperature (C): | 260 |