Diodes Incorporated - DXTN3C100PSQ-13

DXTN3C100PSQ-13 by Diodes Incorporated

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Manufacturer	Diodes Incorporated
Manufacturer's Part Number	DXTN3C100PSQ-13
Description	NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): 3 A;
Datasheet	DXTN3C100PSQ-13 Datasheet

DXTN3C100PSQ-13 Technical Details

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	140 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	3 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	5
Maximum Power Dissipation (Abs):	2.5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Maximum Operating Temperature:	175 Cel
Case Connection:	COLLECTOR
Other Names:	DXTN3C100PSQ-13-ND 31-DXTN3C100PSQ-13TR
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	10
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	100 V
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260
Maximum VCEsat:	.33 V

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