Diodes Incorporated - LD8D5N03

  1. Home
  2. Diodes Incorporated - LD8D5N03
LD8D5N03 by Diodes Incorporated

Image shown is a representation only.

Manufacturer Diodes Incorporated
Manufacturer's Part Number LD8D5N03
Description Power Field-Effect Transistors;
Datasheet LD8D5N03 Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IRLR3110ZTRPBF by International Rectifier

IRLR3110ZTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Form: GULL WING;
BSS138 by Philips Semiconductors

BSS138

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
IRLML6402GTRPBF by International Rectifier

IRLML6402GTRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum DS Breakdown Voltage: 20 V; Transistor Application: SWITCHING;
SI7113ADN-T1-GE3 by Vishay Intertechnology

SI7113ADN-T1-GE3

Vishay Intertechnology

SI7113ADN-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 20A IDM, 11.25mJ EAS, and 0.132 ohm Drain-Source On Resistance. Operating from -55 to 150 °C, it has a DUAL Terminal Position and DRAIN Case Connection.
LTC4451AV#TRMPBF by Analog Devices

LTC4451AV#TRMPBF

Analog Devices

Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 4; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
SI7469ADP-T1-RE3 by Vishay Intertechnology

SI7469ADP-T1-RE3

Vishay Intertechnology

Vishay Intertechnology's SI7469ADP-T1-RE3 is a P-channel FET with 80V DS breakdown voltage and 125A IDM. Ideal for switching applications, it features a built-in diode, 0.027 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount with 5 terminals, this MOSFET has a max power dissipation of 73.5W and can withstand temperatures from -55 to 150°C.
SPP08N80C3 by Infineon Technologies

SPP08N80C3

Infineon Technologies

SPP08N80C3 by Infineon Technologies is a power FET with a min DS breakdown voltage of 800V. It has a max pulsed drain current of 24A and an avalanche energy rating of 340mJ. This N-channel transistor is commonly used in applications requiring high power dissipation and temperature resistance.
IPA80R650CEXKSA2 by Infineon Technologies

IPA80R650CEXKSA2

Infineon Technologies

Infineon's IPA80R650CEXKSA2 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for SWITCHING applications. Features include 24A IDM, 340mJ EAS, and 0.65 ohm RDS(on). Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
IRF530A by Fairchild Semiconductor

IRF530A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; JESD-609 Code: e3; Maximum Operating Temperature: 175 Cel;
IRF7410TRPBF by International Rectifier

IRF7410TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): 30;
IRF540SPBF by International Rectifier

IRF540SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Minimum DS Breakdown Voltage: 100 V; Package Style (Meter): SMALL OUTLINE;
FDB44N25TM by Fairchild Semiconductor

FDB44N25TM

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 307 W; Operating Mode: ENHANCEMENT MODE; Case Connection: DRAIN;
DN3535N8-G by Microchip Technology

DN3535N8-G

Microchip Technology

DN3535N8-G by Microchip Technology is a N-CHANNEL FET with 0.5A IDM, 1.6W Abs Pd, and 10ohm RDS(on). Ideal for switching applications in small outline packages, operating from -55 to 150°C.
IRF530A by Motorola

IRF530A

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Qualification: Not Qualified; Maximum Power Dissipation Ambient: 75 W;
IRFR4104TRPBF by Infineon Technologies

IRFR4104TRPBF

Infineon Technologies

IRFR4104TRPBF by Infineon Technologies is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 42A Drain Current. It is used for SWITCHING applications, featuring a built-in DIODE, 480A Pulsed Drain Current, and 145mJ Avalanche Energy Rating. Ideal for surface mount designs in power electronics.
SI7157DP-T1-GE3 by Vishay Intertechnology

SI7157DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7157DP-T1-GE3 is a P-channel FET with 20V DS breakdown voltage, 300A IDM, and 0.0016 ohm max RDS(on). Ideal for switching applications in enhancement mode operation. Features include built-in diode, small outline package style, and matte tin terminal finish.
FQP27P06 by Fairchild Semiconductor

FQP27P06

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Operating Mode: ENHANCEMENT MODE; Terminal Position: SINGLE;
ZXMP10A18KTC by Diodes Incorporated

ZXMP10A18KTC

Diodes Incorporated

ZXMP10A18KTC by Diodes Inc. is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 21.1A IDM, 0.15 ohm RDS(on), and operates in ENHANCEMENT MODE at up to 150°C. Suitable for surface mount with GULL WING terminals, it offers high performance in compact SMALL OUTLINE package style.
IRF7304TRPBF by Infineon Technologies

IRF7304TRPBF

Infineon Technologies

IRF7304TRPBF by Infineon Technologies is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.6A ID. It features a built-in diode, 0.09 ohm RDS(on), and operates in enhancement mode. Ideal for power management applications requiring high drain current capabilities in compact designs.
ZXMP6A13GTA by Diodes Incorporated

ZXMP6A13GTA

Diodes Incorporated

ZXMP6A13GTA by Diodes Inc. is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 2.3A.