Diodes Incorporated - LTD19P04

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LTD19P04 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number LTD19P04
Description Power Field-Effect Transistors;
Datasheet LTD19P04 Datasheet
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Infineon's IRF7842TRPBF is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 140A IDM, 50mJ EAS, and 0.005 ohm RDS(on). Operating from -55 to 150 °C, it has a small outline package with GULL WING terminals for surface mount assembly.
FDS4675 by Onsemi

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FQD11P06TM by Onsemi

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FQD11P06TM by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, 37.6A IDM, and 0.185 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 38W at 150°C.
SI4946BEY-T1-GE3 by Vishay Intertechnology

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CSD18504Q5AT by Texas Instruments

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IRF9Z34NSTRLPBF by Infineon Technologies

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IRF7404TRPBF by International Rectifier

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International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Feedback Capacitance (Crss): 340 pF; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
TN2510N8-G by Microchip Technology

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FDB33N25TM by Onsemi

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DMG2301L-7 by Diodes Incorporated

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DMG2301L-7 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage and 10A IDM for switching applications. It operates in enhancement mode, has a max power dissipation of 1.5W, and features a 0.12 ohm drain-source resistance. Ideal for small outline packages with dual terminals, it can withstand temperatures from -55 to 150°C.
IRFP460LCPBF by Vishay Siliconix

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IRF530PBF by Vishay Intertechnology

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IRF3710PBF by Infineon Technologies

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Infineon Technologies

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IRF9540PBF by Vishay Siliconix

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Vishay Siliconix

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IRF640 by Unitrode

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IRFP460APBF by International Rectifier

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International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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IRF7493TRPBF by Infineon Technologies

IRF7493TRPBF

Infineon Technologies

Infineon's IRF7493TRPBF is a N-CHANNEL FET with 80V DS Breakdown Voltage and 74A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.015 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this MOSFET has a max power dissipation of 2.5W at 150°C.
FDS8949 by Fairchild Semiconductor

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Form: GULL WING; JEDEC-95 Code: TO-236AB;