Diodes Incorporated - LTM5853

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LTM5853 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number LTM5853
Description Power Field-Effect Transistors;
Datasheet LTM5853 Datasheet
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SUM90P10-19L-E3 by Vishay Intertechnology

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FDB3632 by Fairchild Semiconductor

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2N7002 by Comchip Technology

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
FDS4559-F085 by Onsemi

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BSP295H6327XTSA1 by Infineon Technologies

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BSP125H6327XTSA1 by Infineon Technologies

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BSP320SH6327XTSA1 by Infineon Technologies

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Infineon's BSP320SH6327XTSA1 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It features 11.6A IDM, 0.12 ohm RDS(on), and 150°C Max Operating Temp. Ideal for automotive applications due to AEC-Q101 compliance, it offers high efficiency in compact designs with its small outline package and built-in diode configuration.
AUIRF7341QTR by International Rectifier

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FDS2582 by Onsemi

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IRFB4115PBF by Infineon Technologies

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