Diodes Incorporated - LV20P03K

  1. Home
  2. Diodes Incorporated - LV20P03K
LV20P03K by Diodes Incorporated

Image shown is a representation only.

Manufacturer Diodes Incorporated
Manufacturer's Part Number LV20P03K
Description Power Field-Effect Transistors;
Datasheet LV20P03K Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SPW47N60C3FKSA1 by Infineon Technologies

SPW47N60C3FKSA1

Infineon Technologies

SPW47N60C3FKSA1 by Infineon is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features a single configuration with built-in diode, 47A max drain current, and 0.07 ohm max on-resistance. Ideal for high-power applications requiring efficient switching and high current handling capabilities.
IRF9530NPBF by International Rectifier

IRF9530NPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 79 W; Maximum Drain-Source On Resistance: .2 ohm; Maximum Pulsed Drain Current (IDM): 56 A;
BSC160N15NS5ATMA1 by Infineon Technologies

BSC160N15NS5ATMA1

Infineon Technologies

BSC160N15NS5ATMA1 by Infineon is a N-CHANNEL Power FET with 150V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 224A and 0.016 ohm Drain-Source On Resistance. The transistor's METAL-OXIDE SEMICONDUCTOR technology and SILICON material make it reliable for high-power operations.
IRF840SPBF by Vishay Siliconix

IRF840SPBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain Current (ID): 8 A; Qualification: Not Qualified;
IRF640 by Samsung

IRF640

Samsung

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Turn Off Time (toff): 140 ns; Transistor Application: SWITCHING;
RJK0651DPB-00-J5 by Renesas Electronics

RJK0651DPB-00-J5

Renesas Electronics

Renesas Electronics RJK0651DPB-00-J5 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 100A IDM, and 0.018 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150°C, making it suitable for high-power tasks.
FDT439N by Fairchild Semiconductor

FDT439N

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Qualification: Not Qualified; Transistor Element Material: SILICON;
IRF7410TRPBF by International Rectifier

IRF7410TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): 30;
IRF640PBF by International Rectifier

IRF640PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 18 A; Terminal Form: THROUGH-HOLE;
RFD14N05LSM9A by Intersil

RFD14N05LSM9A

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Package Style (Meter): SMALL OUTLINE; JEDEC-95 Code: TO-252AA;
FDD4141 by Onsemi

FDD4141

Onsemi

The Onsemi FDD4141 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has low 0.0123 ohm Drain-Source Resistance and can handle up to 69W power dissipation.
IRF530PBF-BE3 by Vishay Intertechnology

IRF530PBF-BE3

Vishay Intertechnology

Power Field-Effect Transistors;
FDMS86263P by Onsemi

FDMS86263P

Onsemi

The Onsemi FDMS86263P is a P-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 70A and EAS of 384mJ, operating in ENHANCEMENT MODE. With a compact SMALL OUTLINE package style and -55 to 150 °C temperature range, it offers efficient performance in various electronic systems.
NTF6P02T3G by Onsemi

NTF6P02T3G

Onsemi

NTF6P02T3G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 35A IDM, and 0.05 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 8.3W.
BSC100N06LS3GATMA1 by Infineon Technologies

BSC100N06LS3GATMA1

Infineon Technologies

Infineon's BSC100N06LS3GATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage and 200A IDM. Ideal for SWITCHING applications, it features a 0.01 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE up to 150°C.
MSCSM170AM11CT3AG by Microchip Technology

MSCSM170AM11CT3AG

Microchip Technology

MSCSM170AM11CT3AG by Microchip Technology is a N-CHANNEL FET with 1700V DS Breakdown Voltage, 480A IDM, and 0.0113 ohm RDS(on). It is used for SWITCHING applications in SERIES CONNECTED configuration. Operating from -40 to 175 °C, it features METAL-OXIDE SEMICONDUCTOR technology and SILICON CARBIDE material.
STP11NK50ZFP by STMicroelectronics

STP11NK50ZFP

STMicroelectronics

STP11NK50ZFP by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 40A IDM, and 0.52 ohm RDS(on). Ideal for SWITCHING applications due to its 30W power dissipation, 190mJ EAS rating, and ENHANCEMENT MODE operation at up to 150°C.
G3R75MT12K by Genesic Semiconductor

G3R75MT12K

Genesic Semiconductor

Power Field-Effect Transistors;
IRF640 by Motorola

IRF640

Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Terminal Position: SINGLE; No. of Terminals: 3;
SUM110P08-11L-E3 by Vishay Intertechnology

SUM110P08-11L-E3

Vishay Intertechnology

Vishay Intertechnology's SUM110P08-11L-E3 is a P-channel FET with 80V DS breakdown voltage, ideal for switching applications. Features include 120A max pulsed drain current, 0.0112 ohm max RDS(on), and 375W max power dissipation. Suitable for enhancement mode operation in high-power circuits with operating temperatures ranging from -55 to 175°C.