UZVP2120G by Diodes Incorporated | Transistors

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Manufacturer	Diodes Incorporated
Manufacturer's Part Number	UZVP2120G
Description	P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 200 V; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL;
Datasheet	UZVP2120G Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.3 A
Maximum Pulsed Drain Current (IDM):	1.2 A
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	4
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	25 ohm
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	200 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	260

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