Diodes Incorporated - UZXMD63N03X

  1. Home
  2. Diodes Incorporated - UZXMD63N03X
UZXMD63N03X by Diodes Incorporated

Image shown is a representation only.

Manufacturer Diodes Incorporated
Manufacturer's Part Number UZXMD63N03X
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Form: GULL WING; Package Style (Meter): SMALL OUTLINE;
Datasheet UZXMD63N03X Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.8 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .222 ohm
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BSS138BKWT106 by ROHM

BSS138BKWT106

ROHM

Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 10;
NDS351AN by Onsemi

NDS351AN

Onsemi

NDS351AN by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, ideal for switching applications. It features a max ID of 1.4A and 0.16 ohm RDS(on), operating in enhancement mode at up to 150°C. The small outline package with gull wing terminals makes it suitable for surface mount designs.
MMBF170-7 by Diodes Incorporated

MMBF170-7

Diodes Incorporated

Diodes Inc. MMBF170-7 is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features 0.5A max drain current, 5ohm RDS(on), and 5pF Crss. The small outline package with gull wing terminals makes it suitable for surface mount designs in enhancement mode operation up to 150°C.
FDN327N by Fairchild Semiconductor

FDN327N

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .46 W; No. of Terminals: 3; Maximum Drain-Source On Resistance: .07 ohm;
IRFHS9351TRPBF by Infineon Technologies

IRFHS9351TRPBF

Infineon Technologies

IRFHS9351TRPBF by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2 ELEMENTS, 5.1A Drain Current, and 0.17 ohm On Resistance. With a max power dissipation of 1.4W and operating temperature up to 150°C, it's suitable for various electronic devices requiring high-performance transistors.
BSS138PW,115 by NXP Semiconductors

BSS138PW,115

NXP Semiconductors

NXP Semiconductors' BSS138PW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for switching applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in enhancement mode. This small outline transistor has GULL WING terminals and meets AEC-Q101 standards for automotive use.
2N7002T by Fairchild Semiconductor

2N7002T

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Package Style (Meter): SMALL OUTLINE;
FDS4685 by Fairchild Semiconductor

FDS4685

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel;
BSS138BK by NXP Semiconductors

BSS138BK

NXP Semiconductors

NXP Semiconductors' BSS138BK is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for SWITCHING applications. Featuring a built-in diode, it has a max ID of 0.36A and an on resistance of 1.6 ohm. This SMALL OUTLINE transistor operates in ENHANCEMENT MODE and is surface mountable with GULL WING terminals.
DMN3067LW-7 by Diodes Incorporated

DMN3067LW-7

Diodes Incorporated

Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN;
FDS9431A by Fairchild Semiconductor

FDS9431A

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Transistor Element Material: SILICON; Terminal Finish: MATTE TIN;
AO3407A by Alpha & Omega Semiconductor

AO3407A

Alpha & Omega Semiconductor

AO3407A by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4.3A Drain Current. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package, operating at up to 150°C.
BSS138W by Infineon Technologies

BSS138W

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Form: GULL WING; Additional Features: LOGIC LEVEL COMPATIBLE;
2N7000 by Motorola

2N7000

Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Drain Current (Abs) (ID): .2 A; No. of Elements: 1;
FDN337N by Fairchild Semiconductor

FDN337N

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Moisture Sensitivity Level (MSL): 1; Transistor Application: SWITCHING;
FDC6506P by Onsemi

FDC6506P

Onsemi

FDC6506P by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a min DS Breakdown Voltage of 30V, Max Drain Current of 1.8A, and Max Power Dissipation of 0.96W. With a max operating temperature of 150°C and -55°C min, it offers reliable performance in various environments.
2N7002 by Micro Commercial Components

2N7002

Micro Commercial Components

Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .34 A; Package Style (Meter): SMALL OUTLINE;
2N7002,215 by Nexperia

2N7002,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
BSS123L by Motorola

BSS123L

Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
ZVP2106ASTOA by Diodes Incorporated

ZVP2106ASTOA

Diodes Incorporated

ZVP2106ASTOA by Diodes Inc. is a P-CHANNEL FET with 60V DS breakdown voltage, 0.28A ID, and 5 ohm RDS(on). Ideal for switching applications, it features SILICON transistor element, ENHANCEMENT MODE operation, and METAL-OXIDE SEMICONDUCTOR technology.