Diodes Incorporated - VN10LPSTZ

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VN10LPSTZ by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number VN10LPSTZ
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Terminal Finish: MATTE TIN; No. of Elements: 1;
Datasheet VN10LPSTZ Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .27 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): .625 W
Package Style (Meter): CYLINDRICAL
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): .27 A
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: 5 ohm
Moisture Sensitivity Level (MSL): 1
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