Diodes Incorporated - ZTX1051ASTOA

ZTX1051ASTOA by Diodes Incorporated

Image shown is a representation only.

Manufacturer	Diodes Incorporated
Manufacturer's Part Number	ZTX1051ASTOA
Description	Limited Part Number Data;
Datasheet	ZTX1051ASTOA Datasheet

ZTX1051ASTOA Technical Details

NAME	DESCRIPTION
Operating Temperature:	-55°C ~ 200°C (TJ)
Category:	Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors
Frequency - Transition:	155MHz
Current - Collector (Ic) (Max):	4 A
Vce Saturation (Max) @ Ib, Ic:	210mV @ 100mA, 4A
Mounting Type:	Through Hole
Voltage - Collector Emitter Breakdown (Max):	40 V
Supplier Device Package:	E-Line (TO-92 compatible)
Standard Package:	2,000
Transistor Type:	NPN
Package / Case:	E-Line-3, Formed Leads
Power - Max:	1 W
Current - Collector Cutoff (Max):	10nA
Package:	Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 1A, 2V
Base Product Number:	ZTX1051A
Moisture Sensitivity Level (MSL):	1 (Unlimited)

Popular Products

2N7002

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;

BAV99

ROHM

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LM555CM

Fairchild Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

SZNUP2105LT1G

Onsemi

SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.

2N2222A

Rectron

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;

2N7002

Central Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;

1N4148

Diotec Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

NUP2105LT1G

Onsemi

NUP2105LT1G by Onsemi is a Transient Suppression Device with 350W power dissipation, 29.1V breakdown voltage, and 44V clamping voltage. Commonly used in electronic circuits for surge protection due to its bidirectional polarity and silicon diode element material.

NC7WZ07P6X

Onsemi

The Onsemi NC7WZ07P6X is a logic gate with 2 functions, featuring a propagation delay of 4.8 ns at 1.8V supply voltage. With open-drain output characteristics, it operates in industrial temperatures from -40 to 85°C. Ideal for applications requiring fast signal processing and low power consumption in compact designs.

FDC5614P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;