Diodes Incorporated - ZVN2110CSTOE

ZVN2110CSTOE by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number ZVN2110CSTOE
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): IN-LINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PSIP-T3;
Datasheet ZVN2110CSTOE Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .32 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: 4 ohm
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