Diodes Incorporated - ZVNL535DWP

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ZVNL535DWP by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number ZVNL535DWP
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): UNCASED CHIP; JESD-609 Code: e0; Transistor Element Material: SILICON;
Datasheet ZVNL535DWP Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 2
Minimum DS Breakdown Voltage: 350 V
Qualification: Not Qualified
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): 235
Maximum Drain-Source On Resistance: 40 ohm
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