ZXMN2A04DN8TC by Diodes Incorporated | Transistors

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Manufacturer	Diodes Incorporated
Manufacturer's Part Number	ZXMN2A04DN8TC
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Drain-Source On Resistance: .025 ohm; Operating Mode: ENHANCEMENT MODE;
Datasheet	ZXMN2A04DN8TC Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	5.9 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	2.1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.025 ohm
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	20 V
Qualification:	Not Qualified
Additional Features:	LOW THRESHOLD
Maximum Drain Current (Abs) (ID):	7.7 A

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