Diodes Incorporated - ZXMN3A02X8TA

ZXMN3A02X8TA by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number ZXMN3A02X8TA
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING;
Datasheet ZXMN3A02X8TA Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5.3 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-G8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .025 ohm
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: MO-187AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Peak Reflow Temperature (C): 260
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