Diodes Incorporated - ZXMP3A16N8TC

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ZXMP3A16N8TC by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number ZXMP3A16N8TC
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.8 W; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
Datasheet ZXMP3A16N8TC Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5.6 A
Sub-Category: Other Transistors
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2.8 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .04 ohm
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Additional Features: LOW THRESHOLD
Maximum Drain Current (Abs) (ID): 5.6 A
Peak Reflow Temperature (C): 260
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