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| Manufacturer | Diodes Incorporated |
|---|---|
| Manufacturer's Part Number | ZXMS6001N3QTA |
| Description | N-CHANNEL; Surface Mount: YES; Terminal Position: DUAL; Maximum Power Dissipation Ambient: 1.5 W; No. of Terminals: 4; Moisture Sensitivity Level (MSL): 1; |
| Datasheet | ZXMS6001N3QTA Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 1.1 A |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 4 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | SOURCE |
| Maximum Power Dissipation Ambient: | 1.5 W |
| Maximum Drain-Source On Resistance: | .675 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -40 Cel |
| Minimum DS Breakdown Voltage: | 60 V |
| Additional Features: | ESD PROTECTED |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | 260 |
