BSH103,215 by Nexperia | Transistors

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Manufacturer	Nexperia
Manufacturer's Part Number	BSH103,215
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .5 ohm; Peak Reflow Temperature (C): 260; No. of Terminals: 3;
Datasheet	BSH103,215 Datasheet
In Stock	155,172

NAME	DESCRIPTION
Other Names:	BSH103 T/R-ND 2156-BSH103,215-NEX 1727-4319-2 NEXNEXBSH103,215 1727-4319-1 5202-BSH103,215TR 568-5013-2 1727-4319-6 934054713215 568-5013-6 BSH103 T/R BSH103215 568-5013-1-ND 568-5013-2-ND BSH103,215-ND 568-5013-1 568-5013-6-ND
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.85 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	3
Minimum DS Breakdown Voltage:	30 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Peak Reflow Temperature (C):	260
Maximum Drain-Source On Resistance:	.5 ohm
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
155,172	-	-

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