Diodes Incorporated - ZXTP2012Z-13R

ZXTP2012Z-13R by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number ZXTP2012Z-13R
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 4.3 A; JESD-609 Code: e3;
Datasheet ZXTP2012Z-13R Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 120 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 4.3 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 10
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
No. of Terminals: 3
Maximum Collector-Emitter Voltage: 60 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Case Connection: COLLECTOR
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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