Diodes Incorporated - ZXTP2014GTC

ZXTP2014GTC by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number ZXTP2014GTC
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 4 A;
Datasheet ZXTP2014GTC Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 120 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 4 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): 3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-261AA
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 45
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 140 V
Peak Reflow Temperature (C): 260
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