Efficient Power Conversion - EPC2012C

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EPC2012C by Efficient Power Conversion

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Manufacturer Efficient Power Conversion
Manufacturer's Part Number EPC2012C
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Maximum Drain-Source On Resistance: .1 ohm; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 200 V; Maximum Drain Current (ID): 5 A;
Datasheet EPC2012C Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: GALLIUM NITRIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5 A
Maximum Pulsed Drain Current (IDM): 22 A
Polarity or Channel Type: N-CHANNEL
No. of Terminals: 4
Minimum DS Breakdown Voltage: 200 V
Terminal Position: UNSPECIFIED
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XXUC-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Additional Features: ULTRA LOW RESISTANCE
Maximum Drain-Source On Resistance: .1 ohm
Moisture Sensitivity Level (MSL): 1
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