EPC2012C by Efficient Power Conversion | Transistors

Image shown is a representation only.

Manufacturer	Efficient Power Conversion
Manufacturer's Part Number	EPC2012C
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Maximum Drain-Source On Resistance: .1 ohm; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 200 V; Maximum Drain Current (ID): 5 A;
Datasheet	EPC2012C Datasheet

NAME	DESCRIPTION
Other Names:	917-1084-1 917-1084-2 917-1084-6
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	GALLIUM NITRIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	5 A
Maximum Pulsed Drain Current (IDM):	22 A
Polarity or Channel Type:	N-CHANNEL
No. of Terminals:	4
Minimum DS Breakdown Voltage:	200 V
Terminal Position:	UNSPECIFIED
Package Style (Meter):	UNCASED CHIP
JESD-30 Code:	R-XXUC-X4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Additional Features:	ULTRA LOW RESISTANCE
Maximum Drain-Source On Resistance:	.1 ohm
Moisture Sensitivity Level (MSL):	1

Popular Products

LM7805CT/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates b/w 0-125°C, has a package style of flange mount, and offers low line/load regulation making it ideal for various electronic applications requiring stable power supply.

MMBF170LT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.225W. This small outline transistor has a temperature range from -55 to 150 °C.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

STM32F405RGT6TR by STMicroelectronics is a 32-bit microcontroller with 64 terminals, operating at a max frequency of 26 MHz. It features DAC and ADC channels, along with DMA support. Ideal for industrial applications requiring low power consumption and high-speed processing capabilities.

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

ECA2DHG4R7 by Panasonic is a 4.7uF aluminum electrolytic capacitor with 200V rated DC voltage. It features tan delta of 0.15, leakage current of 0.0664mA, and ripple current of 50mA, making it ideal for applications requiring high capacitance stability and low leakage in through-hole mounting setups at temperatures ranging from -25 to 105°C.

MBR0530T1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.375V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring high-speed switching in compact electronic devices like smartphones and tablets. The package style is small outline with gull wing terminals for surface mount assembly.