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| Manufacturer | Efficient Power Conversion |
|---|---|
| Manufacturer's Part Number | EPC2038 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .5 A; Minimum DS Breakdown Voltage: 100 V; Maximum Operating Temperature: 150 Cel; |
| Datasheet | EPC2038 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
917-1138-1 917-1138-6 917-1138-2 |
| Package Body Material: | UNSPECIFIED |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | GALLIUM NITRIDE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Feedback Capacitance (Crss): | .02 pF |
| Maximum Drain Current (ID): | .5 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Minimum Operating Temperature: | -40 Cel |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 100 V |
| Terminal Position: | UNSPECIFIED |
| Package Style (Meter): | UNCASED CHIP |
| JESD-30 Code: | S-XXUC-B4 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | BALL |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum Drain-Source On Resistance: | 3.3 ohm |









