Fairchild Semiconductor - FDB86363_F085

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FDB86363_F085 by Fairchild Semiconductor

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Manufacturer Fairchild Semiconductor
Manufacturer's Part Number FDB86363_F085
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Avalanche Energy Rating (EAS): 512 mJ; Terminal Form: GULL WING;
Datasheet FDB86363_F085 Datasheet
In Stock41,654
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 110 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 300 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0024 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 512 mJ
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 80 V
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 110 A
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